Official Course Description: MCCCD Approval: 06/22/99
MIT110 19996-99999	LEC	3 Credit(s)	3 Period(s)
Semiconductor Manufacturing Technology I
Semiconductor units of measure and conversion factors, devices and integrated circuit formation, processes, materials, and equipment used in semiconductor manufacturing. Crystal growth and wafer preparation, contamination control, wafer preparation, oxidation, and doping. Prerequisites or Corequisites: CHM130, or CHM130LL, or equivalent, or permission of instructor.

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MCCCD Official Course Competencies:
MIT110   19996-99999	Semiconductor Manufacturing Technology I

1.	Describe the history, development, and trends of the semiconductor industry. (I)
2.	Explain the major product types and transistor building structures, along with integration levels. (I)
3.	Explain the basics of chemistry as they apply to process chemicals. (II)
4.	Explain the basics of atoms, electrical classifications of solids, intrinsic and doped semiconductors. (II)
5.	Describe the techniques and structures required for formation of major integrated circuits components in the wafer surface. (III)
6.	Explain the major integrated circuit types and their functions. (IV)
7.	Explain the basic planar operations performed on the wafer along with the process sequences used to create the circuit components on the chip surface. (V)
8.	Trace the circuit design from the functional diagram to the production of a photomask. (V)
9.	Define both wafer and chip features and terminology. (V)
10.	Define and describe the crystalline material, i.e., ploycrystal, single crystal, and amorphous. (VI)
11.	Identify the three major categories of crystal defects. (VI)
12.	Define major classes of contaminations and their effect on product performance. (VII)
13.	Describe the clean-room area and the total clean-room concept. (VII)
14.	List the principal uses for thermal oxidation. (VIII)
15.	Describe the mechanism of thermal oxidation. (VIII)
16.	List the steps of the pre-oxidation process. (VIII)
17.	Relate the oxidation process in respect to time, temperature, and crystal orientation. (VIII)
18.	Sketch and identify the basic sections of a tube furnace. (VIII)
19.	Explain the process of dry and wet oxidation as to the oxidation time, thickness, and quality of each. (VIII)
20.	Describe chlorine and high pressure oxidation. (VIII)
21.	Compare all oxidation processes. (VIII)
22.	Explain the reaction of photoresist to light. (IX)
23.	List the steps to photomasking. (IX)
24.	Describe the need for, and the process used in, doublemasking, multilayer resist processing, and planarization techniques. (IX)
25.	List and compare the optical and the nonoptical methods of alignment and exposure. (IX)
26.	List the methods of developing. (X)
27.	Explain the purpose of soft and hard bake. (X)
28.	Explain the methods and relative merits of wet and dry etch. (X)
29.	Describe the use of resist strippers. (X)
30.	Explain the purpose and methods of final inspection. (X)
31.	Describe how resolution can be improved. (X)
32.	State the advantage of an image-reversal process. (X)
33.	Identify the parts and advantages of pellicle. (X)
34.	List and define the controlling and limiting factors of the diffusion process. (XI)
35.	Define and describe the four steps of deposition. (XI)
36.	Define ion implant, listing advantages and disadvantages. (XI)
37.	Analyze an ion implanter. (XI)

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MCCCD Official Course Outline:
MIT110   19996-99999	Semiconductor Manufacturing Technology I

I. Semiconductor industry A. Birth of an industry B. The solid-state transistor, devices C. Stages of manufacturing D. Semiconductor industry growth II. Semiconductor materials and process chemicals A. Atomic structure B. Electrical conduction C. Semiconductor production materials D. Process chemicals E. Ions F. States and properties of matter III. Semiconductor devices and integrated circuit formation A. Semiconductor -device formation B. Integrated-circuit formation C. Superconductor D. Physical semiconductor devices IV. Integrated circuit types A. Circuit basics B. Integrated-circuit types C. The next generation V. Wafer fabrication A. Basic-wafer fabrication B. Construction of a semiconductor circuit C. Chip terminology D. Wafer sort E. Packaging VI. Crystal growth and wafer preparation A. Semiconductor materials preparation B. Crystalline materials C. Polycrystals and single crystals D. Crystal growth E. Crystal and wafer quality F. Water fabrication VII. Contamination control A. Contamination sources B. Personnel-generated contamination C. Clean room materials, supplies, and maintenance VIII. Oxidation A. Silicone dioxide layer uses B. Thermal oxidation mechanism C. Vertical tubes furnaces D. Rapid thermal processing (RTP) E. High-pressure oxidation F. Oxidation processes G. Postoxidation evaluation H. Thermal nitridation IX. Photolithography: preparation to exposure A. Overview of photomasking process B. Ten-step process C. Photoresist chemistry D. Photoresist performance factors E. Comparison of positive and negative resists F. Physical properties of photoresists G. Storage and control of photoresists H. Photomaking process X. Photolithography: developing to final inspection A. Development B. Hard bake C. Develop inspect D. Etch E. Wet Etching F. Resist stripping G. Final inspection H. Mask making XI. Doping A. Formation of a junction B. Formation of a doped region C. Concepts of diffusion D. Solid-state semiconductor diffusion E. Open-tube deposition F. Closed-tube deposition G. Oxidation effects H. Ion implantation I. Annealing J. Channeling K. Evaluation of ion implantation

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